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DMT10H015LCG-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 100V 9.4A/34A 8DFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 155°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
33.3 NC @ 10 V
Rds On (Max) @ Id, Vgs:
15mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1871 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
V-DFN3333-8
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
9.4A (Ta), 34A (Tc)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT10
Model Number:
DMT10H015LCG-13
Introduction
N-Channel 100 V 9.4A (Ta), 34A (Tc) 1W (Ta) Surface Mount V-DFN3333-8
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