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PJP8NA65A_T0_00001
manufacturer:
Panjit International Inc.
Description:
650V N-CHANNEL MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 3.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1245 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta)
Power Dissipation (Max):
145W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJP8
Model Number:
PJP8NA65A_T0_00001
Introduction
N-Channel 650 V 7.5A (Ta) 145W (Tc) Through Hole TO-220AB
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