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RQ1E100XNTR
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 30V 10A TSMT8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
12.7 NC @ 5 V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSMT8
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
550mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ1E100
Model Number:
RQ1E100XNTR
Introduction
N-Channel 30 V 10A (Ta) 550mW (Ta) Surface Mount TSMT8
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