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DMT64M1LCG-7
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V V-DFN3333
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
51.4 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
2626 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
V-DFN3333-8 (Type B)
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 20A, 10V
Mfr:
Diodes Incorporated
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.2W (Ta)
Package / Case:
8-PowerVDFN
Drain To Source Voltage (Vdss):
65 V
Current - Continuous Drain (Id) @ 25°C:
16.7A (Ta), 67.8A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
DMT64M1LCG-7
Introduction
N-Channel 65 V 16.7A (Ta), 67.8A (Tc) 1.2W (Ta) Surface Mount V-DFN3333-8 (Type B)
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