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SIHU5N50D-E3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 500V 5.3A TO251AA
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
20 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
325 PF @ 100 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-251AA
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
5.3A (Tc)
Power Dissipation (Max):
104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHU5
Model Number:
SIHU5N50D-E3
Introduction
N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-251AA
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