logo
Send Message
Home > Products > > LND150N3-G-P013

LND150N3-G-P013

manufacturer:
Microchip Technology
Description:
MOSFET N-CH 500V 30MA TO92-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
Depletion Mode
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
-
Input Capacitance (Ciss) (Max) @ Vds:
10 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Package:
Tape & Box (TB)
Supplier Device Package:
TO-92-3
Rds On (Max) @ Id, Vgs:
1000Ohm @ 500µA, 0V
Mfr:
Microchip Technology
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V
Power Dissipation (Max):
740mW (Ta)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Drain To Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
30mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
LND150
Model Number:
LND150N3-G-P013
Introduction
N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3
Send RFQ
Stock:
MOQ: