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SQJ460AEP-T2_GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 60V 58A PPAK SO-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
106 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 10.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2654 PF @ 30 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Power Dissipation (Max):
68W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ460
Model Number:
SQJ460AEP-T2_GE3
Introduction
N-Channel 60 V 58A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
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IRFP460P |
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IRFB17N50L |
MOSFET N-CH 500V 16A TO220AB
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