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DMT8008LFG-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V POWERDI33
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
37.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.9mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2254 PF @ 40 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
POWERDI3333-8
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 48A (Tc)
Power Dissipation (Max):
1W (Ta), 23.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT30
Model Number:
DMT8008LFG-13
Introduction
N-Channel 80 V 16A (Ta), 48A (Tc) 1W (Ta), 23.5W (Tc) Surface Mount POWERDI3333-8
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