1HN04CH-TL-W
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.6V @ 100µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.9 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8Ohm @ 140mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
15 PF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-CPH
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
270mA (Ta)
Power Dissipation (Max):
-
Technology:
MOSFET (Metal Oxide)
Base Product Number:
1HN04
Model Number:
1HN04CH-TL-W
Introduction
N-Channel 100 V 270mA (Ta) Surface Mount 3-CPH
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