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DMT12H007SPS-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 101V~250V POWERDI5
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
44 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
120 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3142 PF @ 60 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerDI5060-8
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
2.9W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT12
Model Number:
DMT12H007SPS-13
Introduction
N-Channel 120 V 80A (Tc) 2.9W Surface Mount PowerDI5060-8
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