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SISH110DN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 13.5A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 4.5 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET® Gen II
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8SH
Rds On (Max) @ Id, Vgs:
5.3mOhm @ 21.1A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.5W (Ta)
Package / Case:
PowerPAK® 1212-8SH
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISH110
Model Number:
SISH110DN-T1-GE3
Introduction
N-Channel 20 V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
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MOSFET N-CH 30V SOT223
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IRF7822TRL |
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IRFP460P |
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IRFB17N50L |
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