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SISS42DN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 11.8/40.5A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
38 NC @ 10 V
Rds On (Max) @ Id, Vgs:
14.4mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1850 PF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8S
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
11.8A (Ta), 40.5A (Tc)
Power Dissipation (Max):
4.8W (Ta), 57W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS42
Model Number:
SISS42DN-T1-GE3
Introduction
N-Channel 100 V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
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MOSFET N-CH 30V SOT223
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IRF7822TRL |
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IRF7822TRR |
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IRF644NS |
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IRFB13N50A |
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|
IRFP460P |
MOSFET N-CH 500V 20A TO247-3
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IRFB17N50L |
MOSFET N-CH 500V 16A TO220AB
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