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DMNH6011LK3Q-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 55V 80A TO252 T&R
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
49.1 NC @ 10 V
Rds On (Max) @ Id, Vgs:
12mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
55 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3077 PF @ 30 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-252, (D-Pak)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMNH6011
Model Number:
DMNH6011LK3Q-13
Introduction
N-Channel 55 V 80A (Tc) 1.6W (Ta) Surface Mount TO-252, (D-Pak)
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