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SIHD6N62ET1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 620V 6A TO252AA
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
34 NC @ 10 V
Rds On (Max) @ Id, Vgs:
900mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
620 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
578 PF @ 100 V
Mounting Type:
Surface Mount
Series:
E
Supplier Device Package:
TO-252AA
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
78W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHD6
Model Number:
SIHD6N62ET1-GE3
Introduction
N-Channel 620 V 6A (Tc) 78W (Tc) Surface Mount TO-252AA
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IRFP460P |
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IRFB17N50L |
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