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SIHD6N62E-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 620V 6A DPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
34 NC @ 10 V
Supplier Device Package:
TO-252AA
Rds On (Max) @ Id, Vgs:
900mOhm @ 3A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
578 PF @ 100 V
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
78W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHD6
Model Number:
SIHD6N62E-GE3
Introduction
N-Channel 6A (Tc) 78W (Tc) Surface Mount TO-252AA
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