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BSB104N08NP3GXUSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 80V 13A/50A 2WDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 40µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
3-WDSON
Gate Charge (Qg) (Max) @ Vgs:
31 NC @ 10 V
Rds On (Max) @ Id, Vgs:
10.4mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
2100 PF @ 40 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
MG-WDSON-2, CanPAK M™
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 50A (Tc)
Power Dissipation (Max):
2.8W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSB104
Model Number:
BSB104N08NP3GXUSA1
Introduction
N-Channel 80 V 13A (Ta), 50A (Tc) 2.8W (Ta), 42W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
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