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TPH1110ENH,L1Q
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 200V 7.2A 8SOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
114mOhm @ 3.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
600 PF @ 100 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-SOP Advance (5x5)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
7.2A (Ta)
Power Dissipation (Max):
1.6W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPH1110
Model Number:
TPH1110ENH,L1Q
Introduction
N-Channel 200 V 7.2A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)
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