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DMNH6008SPSQ-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 60V 16.5A PWRDI5060
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
40.1 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2597 PF @ 30 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
PowerDI5060-8
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
16.5A (Ta), 88A (Tc)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMNH6008
Model Number:
DMNH6008SPSQ-13
Introduction
N-Channel 60 V 16.5A (Ta), 88A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8
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