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DMT10H010LSSQ-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V SO-8 T&R
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
58.4 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
4166 PF @ 50 V
Series:
Automotive, AEC-Q101
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Supplier Device Package:
8-SO
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 13A, 10V
Mfr:
Diodes Incorporated
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.9W (Ta)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
DMT10H010LSSQ-13
Introduction
N-Channel 100 V 12A (Ta) 1.9W (Ta) Surface Mount 8-SO
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