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RCD100N20TL
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 200V 10A CPT3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.25V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Rds On (Max) @ Id, Vgs:
182mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1400 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
CPT3
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
850mW (Ta), 20W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RCD100
Model Number:
RCD100N20TL
Introduction
N-Channel 200 V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
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