FQD12N20LTM-F085P
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 5 V
Rds On (Max) @ Id, Vgs:
280mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1080 PF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Power Dissipation (Max):
2.5W (Ta), 55W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD12N20
Model Number:
FQD12N20LTM-F085P
Introduction
N-Channel 200 V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
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