english
DMT15H017LPSW-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 101V~250V POWERDI5
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.6V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
50 NC @ 10 V
Rds On (Max) @ Id, Vgs:
17.5mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3369 PF @ 75 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
-
Supplier Device Package:
PowerDI5060-8 (Type UX)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
9.4A (Ta), 58A (Tc)
Power Dissipation (Max):
1.3W (Ta), 89W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT15
Model Number:
DMT15H017LPSW-13
Introduction
N-Channel 150 V 9.4A (Ta), 58A (Tc) 1.3W (Ta), 89W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
Send RFQ
Stock:
MOQ: