FQB1P50TM
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
14 NC @ 10 V
Rds On (Max) @ Id, Vgs:
10.5Ohm @ 750mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
350 PF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
1.5A (Tc)
Power Dissipation (Max):
3.13W (Ta), 63W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB1P50
Model Number:
FQB1P50TM
Introduction
P-Channel 500 V 1.5A (Tc) 3.13W (Ta), 63W (Tc) Surface Mount D²PAK (TO-263)
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