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IRFH8202TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 25V 47A/100A 8PQFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.35V @ 150µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
110 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.05mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
7174 PF @ 13 V
Mounting Type:
Surface Mount
Series:
HEXFET®, StrongIRFET™
Supplier Device Package:
8-PQFN (5x6)
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
47A (Ta), 100A (Tc)
Power Dissipation (Max):
3.6W (Ta), 160W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFH8202
Model Number:
IRFH8202TRPBF
Introduction
N-Channel 25 V 47A (Ta), 100A (Tc) 3.6W (Ta), 160W (Tc) Surface Mount 8-PQFN (5x6)
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