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IPL65R650C6SATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 6.7A THIN-PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 210µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Rds On (Max) @ Id, Vgs:
650mOhm @ 2.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
440 PF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ C6
Supplier Device Package:
PG-TSON-8-2
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
6.7A (Tc)
Power Dissipation (Max):
56.8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPL65R650
Model Number:
IPL65R650C6SATMA1
Introduction
N-Channel 650 V 6.7A (Tc) 56.8W (Tc) Surface Mount PG-TSON-8-2
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