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SI4874BDY-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 12A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
7mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3230 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4874
Model Number:
SI4874BDY-T1-GE3
Introduction
N-Channel 30 V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
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IRFB13N50A |
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IRFP460P |
MOSFET N-CH 500V 20A TO247-3
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IRFB17N50L |
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