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BSC019N02KSGAUMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 30A/100A TDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.2V @ 350µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
85 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
1.95mOhm @ 50A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
13000 PF @ 10 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
30A (Ta), 100A (Tc)
Power Dissipation (Max):
2.8W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSC019
Model Number:
BSC019N02KSGAUMA1
Introduction
N-Channel 20 V 30A (Ta), 100A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount PG-TDSON-8-1
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