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Home > Products > > SI4626ADY-T1-GE3

SI4626ADY-T1-GE3

manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 30A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
125 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5370 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
3W (Ta), 6W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4626
Model Number:
SI4626ADY-T1-GE3
Introduction
N-Channel 30 V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
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