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NP60N06PDK-E1-AY
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET TRANSISTOR MORE 1 W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 10 V
Rds On (Max) @ Id, Vgs:
12mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3600 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-263-3
Mfr:
Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C:
60A
Power Dissipation (Max):
105W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NP60N06
Model Number:
NP60N06PDK-E1-AY
Introduction
N-Channel 60 V 60A 105W Surface Mount TO-263-3
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