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SUD35N10-26P-T4GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 35A TO252
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
47 NC @ 10 V
Rds On (Max) @ Id, Vgs:
26mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2000 PF @ 12 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
TO-252AA
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Power Dissipation (Max):
8.3W (Ta), 83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SUD35
Model Number:
SUD35N10-26P-T4GE3
Introduction
N-Channel 100 V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252AA
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