MSJB06N80A-TP
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
10.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
349 PF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Mfr:
Micro Commercial Co
Current - Continuous Drain (Id) @ 25°C:
6A
Power Dissipation (Max):
35W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MSJB06
Model Number:
MSJB06N80A-TP
Introduction
N-Channel 800 V 6A 35W (Tc) Surface Mount D2PAK
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