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Home > Products > Discrete Semiconductor Products > PJF60R290E_T0_00001

PJF60R290E_T0_00001

manufacturer:
Panjit International Inc.
Description:
600V N-CHANNEL SUPER JUNCTION MO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Gate Charge (Qg) (Max) @ Vgs:
40 NC @ 10 V
Rds On (Max) @ Id, Vgs:
290mOhm @ 6.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1013 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
ITO-220AB-F
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta), 15A (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJF60R290E
Introduction
N-Channel 600 V 1.7A (Ta), 15A (Tc) 60W (Tc) Through Hole ITO-220AB-F
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