TN0604N3-G-P013
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
1.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
190 PF @ 20 V
Series:
-
Vgs (Max):
±20V
Package:
Tape & Box (TB)
Supplier Device Package:
TO-92-3
Rds On (Max) @ Id, Vgs:
750mOhm @ 1.5A, 10V
Mfr:
Microchip Technology
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Power Dissipation (Max):
740mW (Ta)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
700mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TN0604
Introduction
N-Channel 40 V 700mA (Tj) 740mW (Ta) Through Hole TO-92-3
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