STD9N65DM6AG
manufacturer:
STMicroelectronics
Description:
DISCRETE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
11.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
440mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
510 PF @ 100 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
D-PAK (TO-252)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Power Dissipation (Max):
89W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD9
Introduction
N-Channel 650 V 9A (Tc) 89W (Tc) Surface Mount D-PAK (TO-252)
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