TK8P60W,RVQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N CH 600V 8A DPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.7V @ 400µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
18.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
500mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
570 PF @ 300 V
Mounting Type:
Surface Mount
Series:
DTMOSIV
Supplier Device Package:
DPAK
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Power Dissipation (Max):
80W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK8P60
Introduction
N-Channel 600 V 8A (Ta) 80W (Tc) Surface Mount DPAK
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