R6007KNX
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 600V 7A TO220FM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
14.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
620mOhm @ 2.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
470 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FM
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Power Dissipation (Max):
46W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6007
Introduction
N-Channel 600 V 7A (Tc) 46W (Tc) Through Hole TO-220FM
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