PSMN8R9-100BSEJ
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 100V 108A D2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
160 NC @ 10 V
Rds On (Max) @ Id, Vgs:
10mOhm @ 25A, 1V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9488 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
75A (Ta)
Power Dissipation (Max):
296W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN8R9
Introduction
N-Channel 100 V 75A (Ta) 296W (Ta) Surface Mount D2PAK
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