DMNH6008SCT
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 60V 130A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2596 PF @ 30 V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-220-3
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
130A (Tc)
Power Dissipation (Max):
210W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMNH6008
Introduction
N-Channel 60 V 130A (Tc) 210W (Tc) Through Hole TO-220-3
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