FQPF630
manufacturer:
onsemi
Description:
MOSFET N-CH 200V 6.3A TO220F
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
25 NC @ 10 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 3.15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
550 PF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
6.3A (Tc)
Power Dissipation (Max):
38W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQPF6
Introduction
N-Channel 200 V 6.3A (Tc) 38W (Tc) Through Hole TO-220F-3
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