PJP60R190E_T0_00001
manufacturer:
Panjit International Inc.
Description:
600V N-CHANNEL SUPER JUNCTION MO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
62 NC @ 10 V
Rds On (Max) @ Id, Vgs:
196mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1421 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
2.1A (Ta), 20A (Tc)
Power Dissipation (Max):
2W (Ta), 231W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJP60R
Introduction
N-Channel 600 V 2.1A (Ta), 20A (Tc) 2W (Ta), 231W (Tc) Through Hole TO-220AB
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