NTPF600N80S3Z
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
15.5 NC @ 10 V
Product Status:
Not For New Designs
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
725 PF @ 400 V
Series:
SuperFET® III
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.8V @ 180µA
Supplier Device Package:
TO-220FP
Rds On (Max) @ Id, Vgs:
600mOhm @ 4A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
28W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tj)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 800 V 8A (Tj) 28W (Tc) Through Hole TO-220FP
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