IPI50N10S3L16AKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 50A TO262-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 60µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
64 NC @ 10 V
Rds On (Max) @ Id, Vgs:
15.7mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
4180 PF @ 25 V
Mounting Type:
Through Hole
Series:
OptiMOS™
Supplier Device Package:
PG-TO262-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPI50N10
Introduction
N-Channel 100 V 50A (Tc) 100W (Tc) Through Hole PG-TO262-3
Send RFQ
Stock:
MOQ: