VN1206L-G-P002
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
125 PF @ 25 V
Series:
-
Vgs (Max):
±30V
Package:
Tape & Reel (TR)
Supplier Device Package:
TO-92-3
Rds On (Max) @ Id, Vgs:
6Ohm @ 500mA, 10V
Mfr:
Microchip Technology
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Power Dissipation (Max):
1W (Tc)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Drain To Source Voltage (Vdss):
120 V
Current - Continuous Drain (Id) @ 25°C:
230mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
VN1206
Introduction
N-Channel 120 V 230mA (Tj) 1W (Tc) Through Hole TO-92-3
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