NTMYS2D9N04CLTWG
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 11µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Gate Charge (Qg) (Max) @ Vgs:
35 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2100 PF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK4 (5x6)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
27A (Ta), 110A (Tc)
Power Dissipation (Max):
3.7W (Ta), 68W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMYS2
Introduction
N-Channel 40 V 27A (Ta), 110A (Tc) 3.7W (Ta), 68W (Tc) Surface Mount LFPAK4 (5x6)
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