NVMFWS2D3P04M8LT1G
manufacturer:
onsemi
Description:
MV8 P INITIAL PROGRAM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
157 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
5985 PF @ 20 V
Series:
Automotive, AEC-Q101
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.4V @ 2.7mA
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 30A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.8W (Ta), 205W (Tc)
Package / Case:
8-PowerTDFN, 5 Leads
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
31A (Ta), 222A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 40 V 31A (Ta), 222A (Tc) 3.8W (Ta), 205W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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