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SQM200N04-1M8_GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 40V 200A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:
310 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
17350 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263-7
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Power Dissipation (Max):
375W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQM200
Model Number:
SQM200N04-1M8_GE3
Introduction
N-Channel 40 V 200A (Tc) 375W (Tc) Surface Mount TO-263-7
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