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SIE808DF-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 60A 10POLARPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs:
155 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8800 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
10-PolarPAK® (L)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
5.2W (Ta), 125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIE808
Model Number:
SIE808DF-T1-GE3
Introduction
N-Channel 20 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
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MOSFET N-CH 30V SOT223
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IRFZ44RSTRR |
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IRF7822TRL |
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IRF7822TRR |
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IRFP460P |
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IRFB17N50L |
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