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SIHB15N65E-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 15A TO263
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
96 NC @ 10 V
Rds On (Max) @ Id, Vgs:
280mOhm @ 8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1640 PF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D²PAK (TO-263)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Power Dissipation (Max):
34W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHB15
Model Number:
SIHB15N65E-GE3
Introduction
N-Channel 650 V 15A (Tc) 34W (Tc) Surface Mount D²PAK (TO-263)
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