FCMT360N65S3
manufacturer:
onsemi
Description:
MOSFET N-CH 650V 10A 4PQFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 200µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 10 V
Rds On (Max) @ Id, Vgs:
360mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
730 PF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
4-PQFN (8x8)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCMT360
Introduction
N-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount 4-PQFN (8x8)
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