2SK3479-Z-E1-AZ
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Last Time Buy
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Vgs(th) (Max) @ Id:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
210 NC @ 10 V
Supplier Device Package:
TO-263, TO-220SMD
Rds On (Max) @ Id, Vgs:
11mOhm @ 42A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
11000 PF @ 10 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
1.5W (Ta), 125W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C:
83A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 100 V 83A (Tc) 1.5W (Ta), 125W (Tc) Surface Mount TO-263, TO-220SMD
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